參數(shù)資料
型號: 2SD1136
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
中文描述: 硅npn型三重擴(kuò)散(三倍擴(kuò)散npn型晶體管)
文件頁數(shù): 2/5頁
文件大?。?/td> 32K
代理商: 2SD1136
2SD1136
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
C(surge)
P
C
P
C
*
Tj
200
V
Collector to emitter voltage
80
V
Emitter to base voltage
5
V
Collector current
4
A
Collector peak current
5
A
Collector surge current
15
A
Collector power dissipation
1.8
W
1
30
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–45 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
200
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CES
h
FE
V
CE(sat)
1.0
mA
V
CE
= 150 V, R
BE
= 0
V
CE
= 5 V, I
C
= 4 A*
I
C
= 4 A, I
B
= 0.4 A*
DC current transfer ratio
20
1
Collector to emitter saturation
voltage
1.5
V
1
Base to emitter saturation
voltage
V
BE(sat)
1.5
V
I
C
= 4 A, I
B
= 0.4 A*
1
Fall time
Note:
t
f
1.0
μs
I
C
= 3.5 A, I
B1
= 0.45 A, L
B
= 0
1. Pulse test.
相關(guān)PDF資料
PDF描述
2SD1137 Silicon NPN Triple Diffused
2SD1137 Power Bipolar Transistors
2SD1138 Silicon NPN Triple Diffused
2SD1138 Power Bipolar Transistors
2SD1141 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
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