參數(shù)資料
型號: 2SC6087
廠商: Toshiba Corporation
英文描述: Silicon NPN Epitaxial Type
中文描述: npn型硅外延式
文件頁數(shù): 2/5頁
文件大?。?/td> 184K
代理商: 2SC6087
2SC6087
2007-06-07
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 160 V, I
E
= 0
1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
1
μ
A
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
80
V
h
FE (1)
V
CE
= 2 V, I
C
= 1 mA
80
200
h
FE (2)
V
CE
= 2 V, I
C
= 0.5 A
100
DC current gain
h
FE (3)
V
CE
= 2 V, I
C
= 1 A
60
V
CE (sat) (1)
I
C
= 0.5 A, I
B
= 50 mA
0.3
V
Collector emitter saturation voltage
V
CE (sat) (2)
I
C
= 1 A, I
B
= 100 mA
0.5
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 1 A, I
B
= 100 mA
1.5
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.5 A
150
MH
Z
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0,f = 1MH
Z
14
pF
Rise time
t
r
0.05
Storage time
t
stg
0.4
Switching time
Fall time
t
f
I
B1
=
I
B2
=
100 mA
Duty cycle
1%
0.15
μ
s
Marking
I
B
20
μ
s
V
CC
= 24 V
Output
2
I
B2
I
B1
Input
I
B
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
C6087
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