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參數(shù)資料
| 型號： | 2SC6087 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon NPN Epitaxial Type |
| 中文描述： | npn型硅外延式 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 184K |
| 代理商： | 2SC6087 |
2SC6087
2007-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6087
Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage
: V
CE (sat)
= 0.5 V (max)
（
I
C
= 1A
）
High-speed switching: t
stg
= 0.4
μ
s (typ)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
160
V
V
CEX
160
V
Collector-emitter voltage
V
CEO
80
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
2.5
A
Collector current
Pulse
I
CP
5.0
A
Base current
I
B
1.0
A
Collector power dissipation
P
C
1.3
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55
～
150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
3 : EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight:0.55g(typ)
1 : BASE
2 : COLLECTOR
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