參數(shù)資料
型號(hào)： 2SC6061
廠商： Toshiba Corporation
英文描述： Silicon NPN Epitaxial Type
中文描述： npn型硅外延式
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 212K
代理商： 2SC6061
2SC6061
2006-11-13
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 180 V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
―
―
100
nA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
B
= 0
180
―
―
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
120
―
―
V
h
FE (1)
V
CE
= 2 V, I
C
= 1 mA
100
―
―
h
FE (2)
V
CE
= 2 V, I
C
= 0.1 A
120
―
300
DC current gain
h
FE (3)
V
CE
= 2 V, I
C
= 0.3 A
60
―
―
Collector emitter saturation voltage
V
CE (sat)
I
C
= 0.3 A, I
B
= 0.01 A
―
―
0.14
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 0.3 A, I
B
= 0.01 A
―
―
1.1
V
Rise time
t
r
―
0.1
―
Storage time
t
stg
―
1.5
―
Switching time
Fall time
t
f
See Figure 3 circuit diagram
V
CC
≒
72 V, R
L
=
24
Ω
I
B1
=
I
B2
=
10 mA
―
0.2
―
μ
s
Figure 3 Switching Time Test Circuit & Timing Chart
Marking
I
B2
I
B1
20
μ
s
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
<
1%
W　N
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
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