參數(shù)資料
型號(hào): 2SC6061
廠商: Toshiba Corporation
英文描述: Silicon NPN Epitaxial Type
中文描述: npn型硅外延式
文件頁數(shù): 1/5頁
文件大?。?/td> 212K
代理商: 2SC6061
2SC6061
2006-11-13
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6061
High-Speed Switching Applications
DC-DC Converter Applications
High-DC current gain: h
FE
= 120 to 300 (I
C
= 0.1 A)
Low-collector-emitter saturation: V
CE (sat)
= 0.14 V (max)
High-speed switching: t
f
= 0.2
μ
s (typ)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
180
V
Collector-emitter voltage
V
CEX
150
V
Collector-emitter voltage
V
CEO
120
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
1.0
A
Collector current (Note 1)
Pulse
I
CP
2.0
A
Base current
I
B
0.1
A
t = 10s
1000
mW
Collector power
dissipation (Note 2)
DC
P
C
625
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm
2
)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 0.01g (Typ.)
1. Base
2. Emitter
3. Collector
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