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參數(shù)資料
| 型號： | 2SC6025 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SMCP, 3 PIN |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 2SC6025 |
2SC6025
No.8144-1/15
Features
Low-noise use
: NF=1.2dB typ (f=2GHz).
High cut-off frequency : fT=14GHz typ (VCE=1V).
:fT=21GHz typ (VCE=3V).
Low operating voltage.
High gain
:
S21e
2=12.5dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
35
mA
Collector Dissipation
PC
120
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
1
μA
DC Current Gain
hFE
VCE=3V, IC=15mA
80
160
Gain-Bandwidth Product
fT1VCE=1V, IC=5mA
14
GHz
fT2VCE=3V, IC=15mA
18
21
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
0.55
0.7
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.25
pF
Forward Transfer Gain
S21e
21VCE=1V, IC=5mA, f=2GHz
9
10.5
dB
S21e
22VCE=3V, IC=15mA, f=2GHz
12.5
dB
Noise Figure
NF
VCE=1V, IC=5mA, f=2GHz
1.2
dB
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8144
31005AB TS IM TB-00000433
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6025
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6026 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
| 2SC6026CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General Purpose Amplifier Applications |
| 2SC6026CT-GR | 功能描述:兩極晶體管 - BJT 100mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6026CTGRTPL3 | 功能描述:兩極晶體管 - BJT 100mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6026CT-Y | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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