參數(shù)資料
型號(hào): 2SC6026-Y
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-1E1A, FSM, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 131K
代理商: 2SC6026-Y
2SC6026
2005-03-23
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SA2154
Lead (Pb) free
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
30
mA
Collector power dissipation
PC
50
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
0.1
A
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
0.1
A
DC current gain
hFE (Note)
VCE = 6 V, IC = 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
60
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.95
pF
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
fSM
1.BASE
2.EMITTER
3.COLLECTOR
0.2±
0.05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.
15±
0.05
0.35±
0.05
0.6±
0.05
1
2
0.1±0.05
0.48
+0
.0
2
-0
.0
4
Type Name
hFE Rank
7F
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