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參數(shù)資料
| 型號： | 2SC5890FS-TL-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, SC-59A, MPAK-3 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 153K |
| 代理商： | 2SC5890FS-TL-E |
Rev.1.00 Aug 10, 2005 page 1 of 13
2SC5890
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
REJ03G0763-0100
(Previous ADE-208-1533)
Rev.1.00
Aug.10.2005
Features
High gain bandwidth product:
fT = 7.8 GHz typ.
High power gain and low noise figure;
PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz
High collector power dissipation:
Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm)
High withstanding to ESD of collector to emitter:
Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition.
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1
2
3
1. Emitter
2. Base
3. Collector
Note: Marking is “FS-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
12
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
75
mA
Collector power dissipation
Pc
700*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
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