參數(shù)資料
型號： 2SC5801-FB
元件分類： 小信號晶體管
英文描述： L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： LEADLESS, MINMOLD PACKAGE-3
文件頁數(shù)： 24/25頁
文件大小： 237K
代理商： 2SC5801-FB
Data Sheet PU10085EJ02V0DS
6
2SC5801
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
15
5
10
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
15
10
0
5
–5
1
10
100
MAG
|S21e|
2
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
15
5
10
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
15
10
0
5
–5
1
10
100
MAG
|S21e|
2
VCE = 2 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
10
5
–5
0
–10
1
10
100
MAG
MSG
|S21e|
2
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
10
5
–5
0
–10
1
10
100
MAG
MSG
|S21e|
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5808-TL-E 制造商:SANYO 功能描述:NPN 400V 2.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 700V 2.5A TO-251 制造商:Sanyo 功能描述:0
2SC5810(TE12L,F) 功能描述:MOSFET Power Trans 100V 0.17V Vce 85ns RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SC581300L 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC5819(TE12L,F) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62
2SC582 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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