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參數(shù)資料
| 型號： | 2SC5761 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, M04, SUPERMINI-4 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 2SC5761 |
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
M04
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250 A to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
California Eastern Laboratories
PART NUMBER
NESG2030M04
EIAJ1 REGISTERED NUMBER
2SC5761
PACKAGE OUTLINE
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
200
IEBO
Emitter Cutoff Current at VEB = 0.5 V, IC = 0
nA
200
hFE
DC Current Gain2 at VCE = 2 V, IC = 5 mA
200
400
Cre
Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz
pF
0.17
0.22
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
dB
0.9
1.1
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
GHz
16
MSG
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
18
20
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
16
18
P1dB
Output Power at 1 dB compression point
dBm
12
VCE = 2 V, IC = 20 mA, f = 2 GHz
OIP3
Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz
dBm
22
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 s, duty cycle ≤ 2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG =
DC
RF
S21
S12
SiGe TECHNOLOGY:
fT = 60 GHz Process
LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
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PDF描述 |
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| 2SC5763M | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 |
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| 2SC5764 | 7 A, 400 V, NPN, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5761-T2-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC5761-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5773JR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.08A 3-Pin MPAK T/R |
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
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