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參數(shù)資料
| 型號(hào)： | 2SC5765 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-4E1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | 2SC5765 |
2SC5765
2002-01-16
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5765
MEDIUM POWER AMPLIFIER APPLICATIONS
STOROBO FLASH APPLICATIONS
Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.)
(IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base voltage
VCBO
15
V
Collector-Emitter voltage
VCEO
10
V
Emitter-Base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulsed
ICP
9
A
Collector power dissipation
PC (Note1)
550
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note 1: When a device is mounted on a glass epoxy board
(35 mm
30 mm 1mm)
Electrical Characteristics (Ta
==== 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector cut-off current
ICBO
VCB = 15 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
mA
Collector-Emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
10
V
hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A
450
700
hFE(2) (Note2) VCE = 1.5 V, IC = 2 A
320
DC current gain
hFE(3) (Note2) VCE = 1.5 V, IC = 5 A
170
Collector-Emitter saturation voltage
VCE (sat)
(Note2)
IC = 3 A, IB = 60 mA
0.27
V
Collector-Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
25
pF
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g
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