參數(shù)資料
型號: 2SC5753-T2FB
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: THIN, SUPER MINIMOLD PACKAGE-4
文件頁數(shù): 19/22頁
文件大?。?/td> 218K
代理商: 2SC5753-T2FB
Data Sheet P15659EJ1V0DS
4
2SC5753
VCE = 3 V
IC = 30 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
35
30
25
20
15
10
5
0
0.1
1
10
MAG
MSG
|S21e|
2
VCE = 3 V
f = 2.5 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
25
20
15
10
5
0
1
10
100
MAG
|S21e|
2
VCE = 3 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
10
5
0
10
1
100
VCE = 3 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
25
20
15
10
5
0
1
10
100
|S21e|
2
MAG
MSG
VCE = 3 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
25
5
10
15
20
0
1
10
100
MAG
MSG
|S21e|
2
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