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參數(shù)資料
| 型號(hào)： | 2SC5606-T1FB-A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SC5606-T1FB-A |
2SC2309
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
55
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
V
I
C = 1 mA, RBE =
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
A
V
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
A
V
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
—
1200
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
—
230
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output capacitance
Cob
—
1.8
3.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SC2309 is grouped by h
FE as follows.
DE
F
250 to 500
400 to 800
600 to 1200
See characteristic curves of 2SC1345.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC5612 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC5612LB228 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTORSUBBING WITH B1BAJW000001 |
| 2SC562 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC562200VLA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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