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參數(shù)資料
| 型號： | 2SC5618 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | M13, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | 2SC5618 |
PART NUMBER
NE687M13
EIAJ1 REGISTERED NUMBER
2SC5618
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
GHz
9
11
VCE = 1 V, IC = 10 mA, f = 2 GHz
GHz
7
9
NF
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz
dB
1.3
2
VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.3
2
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
8.5
10
VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
6
7.5
hFE2
Forward Current Gain at VCE = 2 V, IC = 20 mA
70
130
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
A
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A
0.1
CRE3
Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz
pF
0.4
0.8
NE687M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 11 GHz
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE687M13 transistor is designed for low noise, high gain,
and low cost requirements. This high fT part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
+0.1
–0.05
+0.1
–0.05
+0.1
–0.05
0.5
3
0.1
1
2
1.0
+0.1
–0.05
+0.1
–0.05
0.3
0.35
0.7
0.15
+0.1
–0.05
0.15
0.2
0.125
0.5
±0.05
X
Bottom View
1
2
3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC562 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC562200VLA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC562200VLK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC563200L | 功能描述:TRANS NPN 8VCEO 50MA S-MINI 3P RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC5632G0L | 功能描述:TRANS NPN 8VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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