參數(shù)資料
型號(hào): 2SC5604-FB
元件分類: 小信號(hào)晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: MINIMOLD PACKAGE-3
文件頁(yè)數(shù): 20/23頁(yè)
文件大?。?/td> 99K
代理商: 2SC5604-FB
Data Sheet PU10046EJ02V0DS
6
2SC5604
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
24
20
12
8
16
4
1
10
100
MAG
MSG
|S21e|
2
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
16
12
4
0
8
–4
1
10
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
16
12
4
0
8
–4
1
10
100
MSG
|S21e|
2
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
24
20
12
8
16
4
1
10
100
MAG
MSG
|S21e|
2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
16
8
4
12
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
16
8
4
12
0
1
10
100
MAG
MSG
|S21e|
2
相關(guān)PDF資料
PDF描述
2SC5607 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5614-EB-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5614-T3 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5614-T3FB UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5614-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5606-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):60 @ 5mA,2V 電流 - 集電極(Ic)(最大值):35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):60 @ 5mA,2V 電流 - 集電極(Ic)(最大值):35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:SOT-523 標(biāo)準(zhǔn)包裝:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述: