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參數(shù)資料
| 型號： | 2SC5574 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor(功率晶體管) |
| 中文描述： | 功率晶體管（功率晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SC5574 |
2SC5574
Transistors
Power Transistor (80V, 4A)
2SC5574
!
Features
1) Low saturation voltage.
(Typ. V
CE(sat)
=
0.3V at I
C
/ I
B
=2 / 0.2A)
2) Excellent DC current gain characteristics.
3) Pc =
30W (Tc =
25
°
C)
4) Wide SOA (safe operating area).
5) Complements the 2SA2017.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
80
6
4
6
2
30
150
55
～ +
150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc
=
25
°
C)
°
C
°
C
Single pulse, Pw
=
100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
*
!
External dimensions
(Units : mm)
ROHM : TO-220FN
(3) Emitter(Source)
(2) Collector(Drain)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SC5574
TO-220FN
EFG
500
Basic ordering unit (pieces)
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
100
80
6
Typ.
Max.
10
10
1
1.5
Unit
V
V
V
μ
A
μ
A
V
V
Conditions
h
FE
f
T
Cob
100
10
60
500
MHz
pF
I
C
=
50
μ
A
I
C
=
25
mA
I
E
=
50
μ
A
V
CB
=
10
0V
V
EB
=
6
V
I
C
/I
B
=
2A/0.2A
I
C
/I
B
=
2A/0.2A
V
CE
/I
C
=
4
V/1A
V
CE
=
12
V , I
E
=
0.2A , f
=
5MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current
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