- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄41504 > 2SC5570 28 A, 800 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC5570 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 28 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-21F2A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 388K |
| 代理商： | 2SC5570 |
2SC5570
2004-07-07
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5570
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage: VCBO = 1700 V
Low Saturation Voltage: VCE (sat) = 3 V (Max.)
High Speed: tf (2) = 0.1 s (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
1700
V
CollectorEmitter Voltage
VCEO
800
V
EmitterBase Voltage
VEBO
5
V
DC
IC
28
Collector Current
Pulse
ICP
56
A
Base Current
IB
14
A
Collector Power Dissipation
PC
220
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Collector Cutoff Current
ICBO
VCB = 1700 V, IE = 0
―
1
mA
Emitter Cutoff Current
IEBO
VEB = 5 V, IC = 0
―
100
A
EmitterBase Breakdown Voltage
V (BR) CEO
IC = 10 mA, IB = 0
800
―
V
hFE (1)
VCE = 5 V, IC = 2 A
22
―
48
hFE (2)
VCE = 5 V, IC = 8 A
12.5
―
25
DC Current Gain
hFE (3)
VCE = 5 V, IC = 22 A
4.5
―
7.5
―
CollectorEmitter Saturation Voltage
VCE (sat)
IC = 22 A, IB = 5.5 A
―
3
V
BaseEmitter Saturation Voltage
VBE (sat)
IC = 22 A, IB = 5.5 A
―
1.0
1.5
V
Transition Frequency
fT
VCE = 10 V, IC = 0.1 A
―
2
―
MHz
Collector Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
470
―
pF
Storage Time
tstg (1)
―
2.6
3.0
Fall Time
tf (1)
ICP = 10 A, IB1 (end) = 1.4 A
fH = 64 kHz
―
0.2
0.3
s
Storage Time
tstg (2)
―
1.4
1.6
Switching Time
Fall Time
tf (2)
ICP = 8 A, IB1 (end) = 1.2 A
fH = 130 kHz
―
0.10
0.15
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5593 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5599-T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5600 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5601-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5604-T3FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5570(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5584 | 制造商:Distributed By MCM 功能描述:1500V 20A 150W Bce Matsushita Transistor Top-3L |
| 2SC5585TL | 功能描述:兩極晶體管 - BJT NPN 12V 0.5A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5588 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。