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參數(shù)資料
| 型號： | 2SC5455 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 2SC5455 |
1998
PRELIMINARY DATA SHEET
FEATURE
Ideal for medium-output applications
High gain, low noise
Small reverse transfer capacitance
Can operate at low voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
SILICON TRANSISTOR
2SC5455
NPN EPITAXIAL SILICON TRANSISTOR
4-PIN MINI MOLD
Document No. P13081EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
5°
0
to
0.1
0.8
2.9
±
0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
–0.1
0.16
+0.1
–0.06
0.4
4
1
3
2
+0.1
–0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.6
+0.1
–0.05
0.4
+0.1
–0.05
0.4
+0.1
–0.05
PIN CONNECTIONS
1: Collector
2: Emitter
3: Base
4: Emitter
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
A
DC Current Gain
hFE
VCE = 3 V, IC = 30 mANote 1
75
150
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
12.0
GHz
Reverse Transfer Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.5
0.7
pF
Insertion Power Gain
|S21e|2
VCE = 3 V, IC = 30 mA, f = 2 GHz
8.0
10.0
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 2 GHz
1.5
2.5
dB
Notes 1. Pulse measurement PW
≤ 350
s, duty cycle ≤ 2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5455-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 30mA，3V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| 2SC5455-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5455-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 30mA，3V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:3,000 |
| 2SC5458(TE16L1,NQ) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 400V 0.8A PW-MOLD |
| 2SC5459(Q) | 制造商:Toshiba 功能描述:NPN 400V 3A 13 TO220NIS Cut Tape |
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