參數(shù)資料
型號: 2SC5432
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
中文描述: npn型外延硅晶體管高頻低噪聲放大的高
文件頁數(shù): 2/8頁
文件大?。?/td> 59K
代理商: 2SC5432
2SC5432
2
Preliminary Data Sheet
h
FE
CLASSIFICATION
RANK
EB
FB
Marking
TC
TD
h
FE
80 to 110
100 to 145
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
COLLECTOR CURRENT vs. DC BASE VOLTAGE
I
C
20
0
10
1.0
0.5
V
BE
- DC Base Voltage - V
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
P
T
150
0
50
T
A
- Ambient Temperature - °C
150
100
50
100
DC CURRENT GAIN vs. COLLECTOR CURRENT
D
F
I
C
- Collector Current - mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
25
V
CE
- Collector to Emitter Voltage - V
20
15
10
5
Free Air
V
CE
= 3 V
200
0.5
10
50
5
0
5
10
I
B
= 160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
20
10
2
1
100
20
50
V
CE
= 3 V
相關(guān)PDF資料
PDF描述
2SC5433 NPN Epitaxial Silicon Transistor High Frequency Low Noise Amplifier(NPN 外延硅晶體管)
2SC5434 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5435 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5436 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5437 High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
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