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參數(shù)資料
| 型號(hào)： | 2SC5435 |
| 廠商： | NEC Corp. |
| 英文描述： | High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 高Frequecy低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 59K |
| 代理商： | 2SC5435 |
1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
×
0.8 mm
×
0.59 mm: TYP.)
Contains same chip as 2SC5010
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
125
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
SILICON TRANSISTOR
2SC5435
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. P13078EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1
0
(
0
0
+
0
–
+
0
–
+
0
–
1
3
2
T
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
140
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
12.0
GHz
Reverse Transfer Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
Notes 1.
Pulse measurement P
W
≤
350
μ
s, duty cycle
≤
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5435-T1-A(EB) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC5439(F) | 功能描述:兩極晶體管 - BJT NPN 450V 8A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5443 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-3 1500V 20A 3.5W |
| 2SC5445 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5445(F) | 制造商:Toshiba 功能描述:NPN Cut Tape |
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