參數(shù)資料
型號: 2SC5408-T1FB
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SO-6
文件頁數(shù): 2/6頁
文件大小: 85K
代理商: 2SC5408-T1FB
2SC5408
2
Data Sheet PU10041EJ01V0DS
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
A
DC Current Gain
hFE
VCE = 2 V, IC = 7 mA Note 1
70
140
Gain Bandwidth Product
fT
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
17
GHz
Feed-back Capacitance
Cre
VCB = 2 V, IE = 0, f = 1 MHz Note 2
0.1
0.15
pF
Insertion Power Gain
|S21e|2
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
13
15.5
dB
Noise Figure
NF
VCE = 2 V, IC = 1 mA, f = 2.0 GHz
1.1
1.8
dB
Rank
FB
Marking
T1E
hFE
70 to 140
Notes 1. Pulse measurement PW
≤ 350
s, duty cycle ≤ 2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (TA = 25
°C)
200
100
0
25
20
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
15
10
5
0
50
1.0
2.0
3.0
100
150
50
40
30
20
10
0
0.5
1.0
TA - Ambient Temperature - °C
30 mW
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - V
IC
-
Collector
Current
-
mA
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
mA
P
T
-
Total
Power
Dissipation
-
mW
VCE = 2 V
IB = 20
A
1
500
100
50
20
10
200
2
5
10
20
50
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
h
FE
-
DC
Current
Gain
VCE = 1 V
VCE = 2 V
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