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參數(shù)資料
| 型號(hào)： | 2SC5408-T1FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SO-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SC5408-T1FB |
PRELIMINARY DATA SHEET
FEATURE
High fT
17 GHz TYP.
High gain
|S21e|2 = 15.5 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 7 mA
NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA
6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5408-T1
3 kpcs/reel
8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark
To order evaluation samples, contact your nearby sales office
(supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
2.1±0.1
1.25±0.1
2.0±0.2
0.9±0.1
0.7
1.3
B
0
to
0.1
EE
C
EE
0.65
+0.1
–
0
0.2
+0.1
–
0
0.15
T1E
PACKAGE DIMENSIONS (in mm)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Document No. PU10041EJ01V0DS (1st edition)
(Previous No. P12095EJ1V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
NEC Corporation 1997
NEC Compound Semiconductor Devices 2001
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The mark
shows major revised points.
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| 2SC5409-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC5414A-F | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5415A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5415A-E | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5414AE | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5414AE-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 100MA 12V FT=6.7G |
| 2SC5414AF | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Bulk |
| 2SC5414AF-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5415AE-TD-E | 功能描述:兩極晶體管 - BJT ULAHIGH-FREQUENCY TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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