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參數(shù)資料
| 型號(hào)： | 2SC5390 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial High Frequency Amplifier |
| 中文描述： | 硅外延npn型高頻放大器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2SC5390 |
2SC5390
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
c(peak)
P
C
P
C
*
1
Tj
110
V
Collector to emitter voltage
110
V
Emitter to base voltage
3
V
Collector current
200
mA
Collector peak current
400
mA
Collector power dissipation
1.4
W
Collector power dissipation
7
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at Tc = 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
110
—
—
V
I
C
= 10é A, I
E
=
0
Collector to emitter
breakdown voltage
V
(BR)CEO
110
—
—
V
I
C
= 1mA, R
BE
=
∞
Collector cutoff current
I
CBO
I
EBO
h
FE
V
BE
V
CE(sat)
—
—
10
μ
A
μ
A
V
CB
= 100V, I
E
= 0
V
E B
= 3V, I
C
= 0
V
CE
= 10 V, I
C
= 10mA
V
CE
= 10 V, I
C
= 10mA
I
C
= 200mA, I
B
= 20mA
Emitter cutoff current
—
—
10
DC current transfer ratio
30
—
100
Base to emitter voltage
—
—
1
V
Collector to emitter saturation
voltage
—
—
1
V
Gain bandwidth product
f
T
C
ob
1.0
1.4
—
GHz
V
CE
= 10 V, I
C
= 50mA
V
= 30V, I
E
= 0
f = 1MHz
Collector Output capacitance
—
2.4
3.5
pF
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