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參數(shù)資料
| 型號(hào)： | 2SC5369 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管的微波放大 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 2SC5369 |
2SC5369
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
80
160
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
14
GHz
Feed-back Capacitance
Cre
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.15
0.25
pF
Insertion Gain
| S
21
e |
2
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
12
14
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
1.3
2.3
dB
STANDARD SPECIFICATION
FB
Marking
T95
h
FE
80 to 160
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty cycle
≤
2 %, Pulsed
2.
Measure by using 3-terminal bridge with emitter pin connected to guard terminal of bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
0
50
100
150
100
200
P
T
- T
A
CHARACTERISTICS
Ambient Temperature T
A
(
°
C)
T
T
0
0.5
1.0
20
40
I
C
- V
BE
CHARACTERISTICS
DC Base Voltage V
BE
(V)
C
C
V
CE
= 3 V
10
30
50
0
2
6
8
10
30
I
C
- V
CE
CHARACTERISTICS
Collector to Emitter Voltage V
CE
(V)
C
C
10
10
50
50
200
h
FE
- I
C
CHARACTERISTICS
Collector Current I
C
(mA)
D
F
V
CE
= 3 V
20
500
20
4
I
e
= 200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
100
1
2
5
20
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SC5369(NE696M01) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC536D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (I) |
| 2SC536F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
| 2SC536G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
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