參數(shù)資料
型號(hào): 2SC5289
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
中文描述: NPN硅外延晶體管L波段低功率放大器
文件頁數(shù): 2/12頁
文件大小: 114K
代理商: 2SC5289
2SC5289
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
5
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
5
μ
A
DC Current Gain
h
FE
V
CE
= 3.6 V, I
C
= 200 mA
60
Output Power
P
–1
V
CC
= 3.6 V, f = 1.9 GHz,
26.3
27.0
dBm
Power Gain
G
P
I
Cq
= 1 mA (class AB operation)
5.0
6.0
dB
Collector Efficiency
η
C
Duty factor 1/8
60
70
%
h
FE
Classification
Rank
FB
Marking
T90
h
FE
more than 60
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm
P
O
= 27 dBm
2SC5289
2SC5288
2SC5192
(2) Power amplifier for PHS
+7 dBm
P
L
= 23 dBm
2SC5289
2SC5288
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