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參數(shù)資料
| 型號： | 2SC5299 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
| 中文描述： | 超高清晰度CRT顯示器水平偏轉(zhuǎn)輸出應(yīng)用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 134K |
| 代理商： | 2SC5299 |
2SC5299
Ordering number : EN5293
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
NPN Triple Diffused Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0588 No.5293-1/3
Package Dimensions
unit: mm
2039C-TO3PML
[2SC5299]
SANYO: TO3PML
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°C
°C
1500
800
6
10
25
3.0
70
150
Tc=25°C
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
max
10
1.0
Unit
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=8A, IB=2A
IC=8A, IB=2A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=6A, IB1=1.2A, IB2=–2.4A
IC=6A, IB1=1.2A, IB2=–2.4A
μA
mA
V
mA
V
V
800
1.0
5
1.5
30
20
4
7
Storage Time
Fall Time
3.0
0.2
μs
μs
0.1
Features
High Speed : tf=100ns typ.
High Breakdown voltage : VCBO=1500V.
High reliability (Adoption of HVP process).
Adoption of MBIT process.
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| 2SC5300 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Definition Color Display Horizontal Deflection Output Applications |
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