參數(shù)資料
型號: 2SC5181-T1
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ULTRA SUPER MINIMOLD PACKAGE-3
文件頁數(shù): 6/10頁
文件大?。?/td> 217K
代理商: 2SC5181-T1
2SC5181
3
CHARACTERISTICS CURVES (TA = 25
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TA – Ambient Temperature – °C
P
T
Total
Power
Dissipation
mW
0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VBE – Base to Emitter Voltage – V
IC
Collector
Current
mA
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER
VCE – Collector to Emitter Voltage – V
IC
Collector
Current
mA
0
VCE = 2 V
50
30 mW
100
200
100
150
0.5
1.0
10
20
30
40
50
20
15
10
5
25
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
Passive air cooling
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
IC – Collector Current – mA
fT
Gain
Bandwidth
Product
GHz
1
IC – Collector Current – mA
|S
21e
|
2
Insertion
Power
Gain
dB
0
1
2
3
5
7
10
20
5
10
5
10
15
f = 2 GHz
2
3
5
7
10
20
VCE = 2 V
VCE = 1 V
VCE = 2 V
VCE = 1 V
IC – Collector Current – mA
h
FE
DC
Current
Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
VCE = 1 V
VCE = 2 V
相關(guān)PDF資料
PDF描述
2SC5181FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5182-T1FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5182-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5186-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5186 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5182 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC5182T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB
2SC5182-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5182-T2 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR