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參數(shù)資料
| 型號(hào)： | 2SC5177 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管微型模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5177 |
SILICON TRANSISTOR
2SC5177
FEATURES
Low Current Consumption and High Gain
|S
21e
|
2
= 9.0 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5177-T1
3 000 units/reel
2SC5177-T2
3 000 units/reel
Remark
Contact your NEC sales representatives to order samples
for evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
10
30
150
mA
mW
°
C
°
C
–65 to +150
Document No. P12101EJ2V0DS00 (2nd edition)
(Previous No. TC-2474)
Date Published November 1996 N
Printed in Japan
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pin
No. 3 (collector) facing the
perforations
Embossed tape, 8 mm wide, pins
No. 1 (emitter) and No. 2 (base)
facing the perforations
0
0
+
–
Marking
0
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0
+
–
0
0
2
1
2
0
+
–
2.8±0.2
1.5
0.65
+0.1
3
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5178 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5177T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-23 |
| 2SC5178 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143R |
| 2SC5178-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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