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參數(shù)資料
| 型號： | 2SC5178 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管中的4針mini -模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SC5178 |
SILICON TRANSISTOR
2SC5178
FEATURES
Low current consumption and high gain
|S
21e
|
2
= 11.5 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 10.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5178-T1
3000 units/reel
2SC5178-T2
3000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
10
30
150
mA
mW
°
C
°
C
–65 to +150
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published November 1996 N
Printed in Japan
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0
+
–
2.8
1.5
+0.2
+0.2
0
+
–
0
+
–
0
+
–
1
2
3
4
0
(
2
(
0
+
–
5°
5°
5°
5°
0
0
1
+
–
T
1994
DATA SHEET
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5178-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5178T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143R |
| 2SC5178-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SC-70 |
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