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參數(shù)資料
| 型號： | 2SC5008-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 中文描述： | NPN硅外延晶體管3引腳超超級迷你模具 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SC5008-T1 |
2SC5008
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
μ
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
μ
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
80
160
V
CE
= 3 V, I
C
= 5 mA
*1
Gain Bandwidth Product
f
T
5.5
8.0
GHz
V
CE
= 3 V, I
C
= 5 mA
Feed-back Capacitance
C
re
0.3
0.7
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
*2
Insertion Power Gain
|S
21e
|
2
5.5
7.5
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
Noise Figure
NF
1.9
3.2
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
*1
Pulse Measurement PW
≤
350
μ
s, Duty Cycle
≤
2 %
*2
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
h
FE
Classification
RANK
FB
Marking
44
h
FE
80 to 160
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5009-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010-T1 | 128 x 128 pixel format, LED or EL Backlight available |
| 2SC5011 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5008-T1-A | 制造商:Renesas Electronics Corporation 功能描述:NPN SMALL SIGNAL AMPLIFIER |
| 2SC5008-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5009 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5009-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
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