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參數(shù)資料
| 型號(hào)： | 2SC5008-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 中文描述： | NPN硅外延晶體管3引腳超超級(jí)迷你模具 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2SC5008-T1 |
1993
DATA SHEET
DESCRIPTION
The 2SC5008 is an NPN epitaxial silicon transistor designed for use
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface, process (NEST2 process) which is an NEC
proprietary fabrication technique.
FEATURES
Low Voltage Use.
High f
T
: 8.0 GHz TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
Low C
re
: 0.3 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
Low NF: 1.9 dB TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
High |S
21e
|
2
: 7.5 dB TYP. (@ V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz)
Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5008
50 pcs./Unit
2SC5008-T1
3 kpcs./Reel
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
35
V
V
V
mA
125 mW
150
–65 to + 150
C
C
SILICON TRANSISTOR
2SC5008
Document No. P10387EJ2V0DS00 (2nd edition)
(Previous No. TD-2433)
Date Published July 1995 P
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
1.6 ± 0.1
0.8 ± 0.1
1
1
1
+
–
+
–
2
3
0
0
0
+
–
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5009-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010-T1 | 128 x 128 pixel format, LED or EL Backlight available |
| 2SC5011 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5008-T1-A | 制造商:Renesas Electronics Corporation 功能描述:NPN SMALL SIGNAL AMPLIFIER |
| 2SC5008-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5009 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5009-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
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