參數(shù)資料
型號(hào): 2SC4815-L
元件分類(lèi): 功率晶體管
英文描述: 5 A, 60 V, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 283K
代理商: 2SC4815-L
Data Sheet D15605EJ3V0DS
2
2SC4815
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 5.0 A, IB = 0.5 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC = 2.5 A, IB1 =
IB2 = 0.25 A
VBE(OFF) =
1.5 V, L = 180
H, Clamped
60
V
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 7.0 V, IC = 0
10
A
DC current gain
hFE1*VCE = 2.0 V, IC = 0.5 A
100
DC current gain
hFE2*VCE = 2.0 V, IC = 1.0 A
100
200
400
DC current gain
hFE3*VCE = 2.0 V, IC = 3.0 A
60
Collector saturation voltage
VCE(sat)1*IC = 3.0 A, IB = 0.15 A
0.15
0.3
V
Collector saturation voltage
VCE(sat)2*IC = 4.0 A, IB = 0.2 A
0.3
0.5
V
Base saturation voltage
VBE(sat)1*IC = 3.0 A, IB = 0.15 A
0.9
1.2
V
Base saturation voltage
VBE(sat)2*IC = 4.0 A, IB = 0.2 A
1.2
1.5
V
Collector capacitance
Cob
VCB = 10 V, IE = 0 , f = 1.0 MHz
70
pF
Gain bandwidth product
fT
VCE = 10 V, IC = 0.5 A
150
MHz
Turn-on time
ton
0.1
s
Storage time
tstg
1.0
s
Fall time
tf
IC = 3.0 A, RL = 17
,
IB1 =
IB2 = 0.15 A, VCC 50 V
Refer to the test circuit.
0.25
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
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%DVH
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(PLWWHU
or less
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