- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49955 > 2SC4815-L 5 A, 60 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SC4815-L |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 283K |
| 代理商： | 2SC4815-L |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON
EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
High hFE and low VCE(sat):
VCE(sat)
≤ 0.3 V @IC = 3.0 A, IB = 0.15 A
hFE
≥ 100
@VCE = 2.0 V, IC = 1.0 A
Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation
PT
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4815 | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SC4821C | Si, NPN, RF POWER TRANSISTOR |
| 2SC4824-E | 0.2 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC4824-D | 0.2 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SA1850 | 0.2 A, 120 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。