參數(shù)資料
型號： 2SC4810
廠商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
中文描述： NPN硅外延晶體管（達林頓連接筆記本高）高速開關(guān)
文件頁數(shù)： 2/6頁
文件大?。?/td> 120K
代理商： 2SC4810
Data Sheet D15601EJ2V0DS
2
2SC4810
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 5 A, I
B
= 5 mA, L = 180
μ
H
100
V
Collector to emitter voltage
V
CEX(SUS)
I
C
= 5 A, I
B
= 5 mA
L = 180
μ
H, clamped
100
V
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0
1.0
μ
A
Emitter cutoff current
I
EBO
V
EB
= 5 V, I
C
= 0
5.0
mA
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 2.0 A
2,000
20,000
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 4.0 A
500
Collector saturation voltage
V
CE(sat)
*
I
C
= 2.0 A, I
B
= 2.0 mA
0.9
1.5
V
Base saturation voltage
V
BE(sat)
*
I
C
= 2.0 A, I
B
= 2.0 mA
1.5
2.0
V
Turn-on time
t
on
0.5
μ
s
Storage time
t
stg
2.5
μ
s
Fall time
t
f
I
C
= 2.0 A, I
B1
=
I
B2
= 2.0 mA
R
L
= 25
, V
CC
50 V
Refer to the test circuit.
0.6
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料
PDF描述
2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
2SC4811K TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-126VAR
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