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參數(shù)資料
| 型號： | 2SC4703-T1SH |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, POWER, MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC4703-T1SH |
Data Sheet PU10339EJ01V1DS
3
2SC4703
TYPICAL CHARACTERISTICS (TA = +25
°°°°C)
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
10
5
6
7
8
9
4
1
2
5 7 10
50 70100
20
200
VCE = 10 V
5 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
1
10
0.1
1.0
1.2
0.2
0.4
0.6
0.8
VCE = 10 V
5 V
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
120
20
40
60
0
2
4
6
8
10
12
14
IB = 0.7 mA
0.6 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
f = 1 MHz
Output
Capacitance
C
ob
(pF)
Collector to Base Voltage VCB (V)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5
2
0.2
1
0.5
0.2 0.3 0.5
0.1
1
2 3
5
10
20 30
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
100
50
10
100
0.1
1
10
1 000
VCE = 10 V
5 V
500
400
1 000
1 500
2 000
1 800
2 500
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ceramic Substrate
16 cm2
× 0.7 mm (t)
Rth (j-a) 62.5C/W
Free Air
Rth (j-a) 312.5C/W
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