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參數資料
| 型號： | 2SC4703-T1SH |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, POWER, MINIMOLD PACKAGE-3 |
| 文件頁數： | 2/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC4703-T1SH |
Data Sheet PU10339EJ01V1DS
2
2SC4703
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
–
1.5
A
Emitter Cut-off Current
IEBO
VEB = 2 V, IC = 0 mA
–
1.5
A
DC Current Gain
hFE
Note 1
VCE = 5 V, IC = 50 mA
50
–
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 5 V, IC = 50 mA
–
6.0
–
GHz
Insertion Power Gain (1)
S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz
6.5
8.3
–
dB
Insertion Power Gain (2)
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
–
8.5
–
dB
Noise Figure
NF
VCE = 5 V, IC = 50 mA, f = 1 GHz
–
2.3
3.5
dB
Collector Capacitance
Cob
Note 2
VCB = 5 V, IE = 0 mA, f = 1 MHz
–
1.5
2.5
pF
2nd Order Intermoduration Distortion
IM2
VCE = 5 V
–
55
–
dBc
IC = 50 mA,
VO = 105 dB
V/75 ,
f = 190
90 MHz
VCE = 10 V
63
–
3rd Order Intermoduration Distortion
IM3
VCE = 5 V
–
76
–
dBc
IC = 50 mA,
VO = 105 dB
V/75 ,
f = 2
× 190 200 MHz
VCE = 10 V
–
81
–
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
SH
SF
SE
Marking
SH
SF
SE
hFE Value
50 to 100
80 to 160
125 to 250
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