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參數(shù)資料
| 型號(hào)： | 2SC4695 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低頻通用放大器，噪聲抑制應(yīng)用的NPN硅外延平面型晶體管) |
| 中文描述： | 瑞展硅晶體管低頻通用放大器，屏蔽應(yīng)用（低頻通用放大器，噪聲抑制應(yīng)用的npn型硅外延平面型晶體管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | 2SC4695 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose Amplifier,
Muting Applications
Ordering number:EN3486
2SC4695
12099HA (KT)/7190MH, TA (KOTO) No.3486–1/4
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2018B
[2SC4695]
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Features
· Adoption of FBET process.
· High DC current gain.
· High V
EBO
(V
EBO
≥
25V).
· High reverse h
FE
(150 typ).
· Small ON resistance [Ron=1
(I
B
=5mA)].
· Very small-sized package permitting 2SC4695-
applied sets to be made small and slim.
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