參數(shù)資料
型號(hào)： 2SC4703SE
廠商： NEC Corp.
英文描述： BJT
中文描述： 雙極型晶體管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 66K
代理商： 2SC4703SE
SILICON TRANSISTOR
2SC4703
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10375EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier
operating with low supply voltage (V
CE
= 5 V). This low distortion
characteristic makes it suitable for CATV, tele-communication and other
use. It employs surface mount type plastic package, Power Mini Mold
(SOT-89).
FEATURES
Low distortion at low supply voltage.
IM
2
55 dB TYP., IM
3
76 dB TYP.
@V
CE
= 5 V, I
C
= 50 mA, V
O
= 105 dB /75
Large P
T
with surface mount type package.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
* 0.7 mm 16 cm
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
2.5
150
1.8
150
V
V
V
mA
W
C
C
55 to +150
2
double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
0.03
+0.05
0.47
±0.06
0.42±0.06
0.42
4.5±0.1
1.6±0.2
3.0
E
B
C
1.5
0
2
4
1.5±0.1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SC4703-T1-AZ-SE 制造商:Renesas Electronics Corporation 功能描述:
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