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參數(shù)資料
| 型號： | 2SC4264 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 24K |
| 代理商： | 2SC4264 |
2SC4264
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
20
V
Collector to emitter voltage
11
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CE(sat)
—
—
0.5
μ
A
μ
A
μ
A
V
CB
= 15 V, I
E
= 0
V
CE
= 11 V, R
BE
=
∞
V
EB
= 3 V, I
C
= 0
I
C
= 10 mA, I
B
= 5 mA
—
—
10
Emitter cutoff current
—
—
1.0
Collector to emitter saturation
voltage
—
—
0.7
V
DC current transfer ratio
h
FE
Cob
20
—
—
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1MHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
—
—
1.5
pF
Gain bandwidth product
Note:
Marking is “GC”.
f
T
1.4
—
—
GHz
See characteristic curves of 2SC2734.
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PDF描述 |
|---|---|
| 2SA1374 | Silicon PNP Epitaxial |
| 2SC4265 | Silicon NPN Epitaxial |
| 2SC4292 | NPN triple diffused planar silicon transistor |
| 2SC4300 | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關(guān)晶體管）) |
| 2SC4301 | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關(guān)晶體管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4264GCTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4265 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC4265JC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC4265JCTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4269 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF Converter, Local Oscillator Applications |
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