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參數(shù)資料
| 型號： | 2SC4115E-WBFBP-03A |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2SC4115E-WBFBP-03A |
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
2SC4115E
TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Low V
CE
(sat).V
CE
(sat) = 0.2V (Typ.)(I
C
/I
B
= 2A/0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:CFQ, CFR, CFS
C
CFQ
B E
MAXIMUM RATINGS T
A
=25
unless otherwise noted
℃
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
D
Total Device Dissipation
T
J
Junction Temperature
T
stg
Storage Temperature
Value
40
20
Units
V
V
6
V
3
A
150
mW
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
Test conditions
I
C
= 50μA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
=50μA, I
C
=0
V
CB
=30V , I
E
=0
V
EB
= 5V , I
C
=0
V
CE
=2 V, I
C
= 0.1A
I
C
= 2A, I
B
=0.1A
V
CE
=2V, I
C
=0.5 A
f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
MIN
40
20
6
120
TYP
MAX
0.1
0.1
560
0.5
UNIT
V
V
V
μA
μA
V
Transition frequency
f
T
290
MHz
Collector output capacitance
CLASSIFICATION OF h
FE
Rank
C
obo
25
pF
Q
R
S
Range
120-270
180-390
270-560
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