參數(shù)資料
型號: 2SC4132
廠商: Rohm CO.,LTD.
英文描述: Power Transistor(功率晶體管)
中文描述: 功率晶體管(功率晶體管)
文件頁數(shù): 1/1頁
文件大?。?/td> 63K
代理商: 2SC4132
2SC4132 / 2SD1857 / 2SD2343
Transistors
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857 / 2SD2343
!
Features
1) High breakdown voltage. (BV
CEO
= 120V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
= 10V)
3) High transition frequency. (f
T
= 80MHz)
4) Complements the 2SB1236.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
120
120
5
2
3
0.5
2
1
1.5
5
150
55~+150
Unit
V
V
V
A
A
W
*
1
*
2
2SC4132
2SD1857
2SD2343
W (Tc = 25
°
C)
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
*
1 Single pulse Pw = 10ms
*
2 When mounted on a 40
×
40
×
0.7mm ceramic board.
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
2SC4132
MPT3
PQR
CB
*
T100
1000
2SD1857
ATV
PQR
TV2
2500
2SD2343
TO-126FP
PQ
1000
*
Denotes h
FE
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
ROHM : MPT3
EIAJ : SC-62
ROHM : ATV
ROHM : TO-126FP
2SD2343
2SD1857
2SC4132
1
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0
1
0
1
0
3
0
1
(3)
4
(1)
(2)
0.5
4.0
2.5
1.0
0.45
(3) Base
1.05
Taping specifications
(2) Collector
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
6
1.6
0.95
0.8
2.3
(2) Collector
(3) Base
(1) Emitter
(1) (2) (3)
2.3
1
1
1.75
1
1
7.8
0.7
1.76
C0.7
9
3.2
Rear
φ
3.19
Tor
φ
3.3
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
120
120
5
82
Typ.
Max.
1
1
0.4
390
Unit
V
V
V
μ
A
μ
A
V
Conditions
f
T
Cob
80
20
*
*
MHz
pF
I
C
= 50
μ
A
I
C
= 1mA
I
E
= 50
μ
A
V
CB
= 100V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
h
FE
82
270
2SD2343
2SC4132,2SD1857
V
CE
/I
C
= 5V/0.1A
V
CE
= 5V , I
E
=
0.1A , f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
*
Measured using pulse current.
DC current
transfer ratio
相關PDF資料
PDF描述
2SD2343 Power Transistor(功率晶體管)
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2SC4138 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴散平面晶體管(高壓和高速開關晶體管))
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