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參數(shù)資料
| 型號： | 2SC4095 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管4個(gè)引腳微型模具 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 107K |
| 代理商： | 2SC4095 |
DATA SHEET
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
FEATURES
NF = 1.8 dB TYP. @ f = 2.0 GHz, V
CE
= 6 V, I
C
= 5 mA
S
21e
2
= 9.5 dB TYP. @ f = 2.0 GHz, V
CE
= 6 V, I
C
= 10 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
35
200
150
V
V
V
mA
mW
C
C
65 to +150
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 6 V, I
C
= 10 mA
Gain Bandwidth Product
f
T
10
GHz
V
CE
= 6 V, I
C
= 10 mA f = 1.0 GHz
Feed-Back Capacitance
C
re
0.25
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
7.5
9.5
dB
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
12
dB
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 6 V, I
C
= 5 mA, f = 2.0 GHz
h
FE
Classification
Class
R46/RDF *
R47/RDG *
R48/RDH *
Marking
R46
R47
R48
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
0
0
+
0
0
4
1
3
2
+
0
2.8
1.5
+0.2
0.3
+0.2
0.1
0
+
0
0
+
0
0
+
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4095(NE68039E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC4095-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:10GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.8dB @ 2GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 10mA，6V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| 2SC4095-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:10GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.8dB @ 2GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 10mA，6V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:3,000 |
| 2SC4095-T1-A-RDF | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4095-T1-A-RDG | 制造商:Renesas Electronics Corporation 功能描述: |
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