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參數資料
| 型號： | 2SC4094R38 |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 中文描述： | 晶體管|晶體管|叩| 10V的五（巴西）總裁| 65MA一（c）|的SOT - 143RVAR |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SC4094R38 |
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF = 1.2 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 7 mA
S
21e
2
= 15 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
200
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
250
V
CE
= 8V, I
C
= 20 mA
Gain Bandwidth Product
f
T
9
GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Feed-Back Capacitance
C
re
0.25
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
13
15
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.0
dB
V
CE
= 8 V, I
C
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
0
0
+
0
0
4
1
3
2
+
0
2.8
1.5
+0.2
0.3
+0.2
0.1
0
+
0
0
+
0
0
+
0
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4094RCF | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4094RCG | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 2SC4094RCH | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4095 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC4104 | High-Definition CRT Display Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4094RCF | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 2SC4094RCG | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 2SC4094RCH | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 2SC4094-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:9GHz 噪聲系數（dB，不同 f 時的典型值）:1.2dB @ 1GHz 增益:13.5dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 7mA，3V 電流 - 集電極（Ic）（最大值）:65mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應商器件封裝:SOT-143 標準包裝:1 |
| 2SC4094-T1-A(RCG) | 制造商:Renesas Electronics 功能描述:NPN |
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