參數(shù)資料
型號(hào): 2SC4094R36
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
中文描述: 晶體管|晶體管|叩| 10V的五(巴西)總裁| 65MA一(c)|的SOT - 143RVAR
文件頁數(shù): 1/8頁
文件大小: 102K
代理商: 2SC4094R36
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF = 1.2 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 7 mA
S
21e
2
= 15 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
200
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
250
V
CE
= 8V, I
C
= 20 mA
Gain Bandwidth Product
f
T
9
GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Feed-Back Capacitance
C
re
0.25
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
13
15
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.0
dB
V
CE
= 8 V, I
C
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
0
0
+
0
0
4
1
3
2
+
0
2.8
1.5
+0.2
0.3
+0.2
0.1
0
+
0
0
+
0
0
+
0
相關(guān)PDF資料
PDF描述
2SC4094R37 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
2SC4094R38 TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094RCF SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
2SC4094RCG TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094RCH SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4094R37 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094R38 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094RCF 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094RCG 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094RCH 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR