參數(shù)資料
型號(hào)： 2SC3856
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管)
中文描述： 15 A, 180 V, NPN, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 24K
代理商： 2SC3856
78
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1492)
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3856
200
180
6
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC3856
100
max
100
max
180
min
50
min
2.0
max
20
typ
300
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
2S C3856
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
1.0
2.0
1.5
Base Current I
B
(A)
C
C
(
I
C
=10A
5A
C
C
(
0
15
10
5
0
2
1
Base-Emittor Voltage V
BE
(V)
(V
CE
=4V)
1(a m
2CaTp
–Csm
0.1
1
3
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
130
100
50
3.5
0
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
25
50
75
100
125
150
3
10
100
200
0.1
1
0.5
10
40
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
10ms
100ms
3ms
Without Heatsink
Natural Cooling
0.02
0.1
1
10
0.5
5
15
20
50
100
300
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
5
15
10
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
700mA
300mA
500mA
200mA
100mA
50mA
I
B
=20mA
1A
(V
CE
=4V)
0.02
0.5
5
1
20
50
200
100
0.1
10 15
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–10
10
20
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
4
I
C
(A)
10
V
(V)
–5
I
B2
(A)
–1
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
1.8typ
t
f
(
μ
s)
0.6typ
I
(A)
1
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
h
FE
Rank
O(50 to 100), P(70 to 140), Y(90 to 180)
相關(guān)PDF資料
PDF描述
2SC3857 Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管)
2SC3858 Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管)
2SC3890 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）)
2SC3913 Switching Applications(with Bias Resistance)
2SA1519 Switching Applications(with Bias Resistance)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3857 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 200V 15A MT200
2SC3858 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN AUDIO/GP MT-200
2SC3858T 制造商:Allegro MicroSystems LLC 功能描述:
2SC3859 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. SC-5950V .1A .2W ECB SURFACE MOUNT
2SC3866 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*