參數(shù)資料
型號(hào): 2SC3858
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管)
中文描述: 17 A, 200 V, NPN, Si, POWER TRANSISTOR
封裝: MT-200, 3 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 24K
代理商: 2SC3858
80
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1494)
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3858
200
200
6
17
5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
h
FE
Rank
2SC3858
100
max
100
max
200
min
50
min
2.5
max
20
typ
300
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=8A
I
C
=10A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
Y(50 to 100), P(70 to 140), G(90 to 180)
2S C3858
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
1
2
3
Base Current I
B
(A)
C
C
(
I
C
=15A
10A
5A
C
C
(
0
15
17
10
5
0
2
1
Base-Emittor Voltage V
BE
(V)
(V
CE
=4V)
15CCsTm
2C
–CaTp
1
10
100
1000
2000
Time t(ms)
0.1
1
2
0.5
T
θ
j
(
200
160
120
80
40
5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Collector-Emitter Voltage V
CE
(V)
C
C
(
2
10
100
300
0.1
1
0.5
10
50
5
10ms
Without Heatsink
Natural Cooling
DC
100ms
20ms
0.02
0.1
1
0.5
17
10
5
20
50
100
300
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
5
10
17
15
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
500mA
700mA
1A
300mA
200mA
50mA
I
B
=20mA
15
(V
CE
=4V)
0.02
0.5
1
5
10
0.1
17
Collector Current I
C
(A)
D
F
125C
25C
–30C
10
50
100
200
0
–0.1
–1
–10
10
20
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
100mA
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
4
I
C
(A)
10
V
(V)
–5
I
B2
(A)
–1
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
1.8typ
t
f
(
μ
s)
0.6typ
I
(A)
1
V
(V)
10
2
3
1.05
+0.2
-0.1
B
E
5.45
±0.1
5.45
±0.1
2-3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
2
±
2
4
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
External Dimensions
MT-200
Weight : Approx 18.4g
a. Type No.
b. Lot No.
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PDF描述
2SC3890 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管(高壓和高速開關(guān)晶體管))
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