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參數(shù)資料
| 型號(hào)： | 2SC3852A |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon NPN Epitaxial Planar Transistor(硅NPN外延平面晶體管) |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, FM20, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | 2SC3852A |
77
2SC3852/3852A
High h
FE
L
OW
V
CE
(sat)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
1
2
3
2
1
Collector-Emitter Voltage V
CE
(V)
3
4
5
6
C
C
(
I
B
=12mA
0.5mA
1mA
2mA
3mA
5mA
8mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0.01
0.1
0.5
1
3
100
500
2000
1000
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0.01
0.1
0.5
1
3
100
500
2000
1000
Collector Current I
C
(A)
D
F
(V
CE
=4V)
0.5
1
5
1
10
100
1000
V
CB
=10V
I
E
=–2A
Time t(ms)
T
θ
j
(
10
50
3
5
100
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.001
1.0
1.0
0.5
0.005
0.01
Base Current I
B
(A)
0.1
0.05
1
0.5
C
C
(
I
C
=1A
2A
3A
0
2
3
1
0
1.1
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15 a ep
2CaTp
–CaTp
25C
–30C
125C
–0.005 –0.01
–0.1
–0.5
–0.05
–2
–1
20
10
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
30
20
10
00
50
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Silicon NPN Epitaxial Planar Transistor
Application :
Driver for Solenoid and Motor, Series Regulator and General Purpose
External Dimensions
FM20(TO220F)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
20
1.0
R
L
(
)
I
C
(A)
V
(V)
–5
I
(mA)
–30
t
on
(
μ
s)
0.8typ
t
stg
(
μ
s)
3.0typ
t
f
(
μ
s)
1.2typ
I
(mA)
15
V
(V)
10
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
6
3
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC3852
80
60
min
Unit
μ
A
V
μ
A
V
V
MHz
pF
Conditions
V
CB
=
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=2A, I
B
=50mA
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
2SC3852A
100
80
min
100
max
500
min
0.5
max
15
typ
50
typ
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
10
max
2SC3852
80
60
2SC3852A
100
80
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