參數(shù)資料
型號(hào): 2SC3807C
廠商: Sanyo Electric Co.,Ltd.
英文描述: NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
中文描述: 瑞展25V的硅晶體管/甲高參與者中,低頻通用放大器應(yīng)用
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 55K
代理商: 2SC3807C
2SC3807C
No. A0439-3/4
Ta=75
°
C
25
°
C
--25
°
C
1000
5
0.01
5
3
2
7
3
2
5
Collector Current, IC -- A
Cob -- VCB
0.1
7
2
3
2
3
5
1.0
7
VCE=5V
IT11144
IT11147
10
5
3
100
2
7
IT11146
3
1.0
2
0.01
2
3
Ta= --25
°
C
25
°
C
75
°
C
7
5
IT11148
0.01
3
2
5
Collector Current, IC -- A
0.1
7
2
3
2
3
5
1.0
7
100
2
3
7
5
7
3
2
5
0.1
5
3
Collector-to-Base Voltage, VCB -- V
7 1.0
2
2
5
3
2
5
3
7
10
0.01
3
2
5
Collector Current, IC -- A
A S O
0.1
7
2
3
2
3
5
1.0
7
3
2
5
Collector Current, IC -- A
PC -- Ta
0.1
7
2
3
2
3
5
1.0
7
0.1
0.01
5
7
7
5
3
2
7
5
3
2
IT11145
IC / IB=50
Ta=75
°
C
-25
°
C
25
°
C
VCE=10V
f=1MHz
IC / IB=50
0.1
1.0
5
1.0
7
7
2
5
3
7
2
5
3
10
10
2
3
5
3
5
7
2
1m
ICP=4A
IC=2A
ITR06041
1m
100ms
DCoeain
IT11173
0
0.2
0.4
1.0
1.2
0.6
0.8
1.4
20
0
60
40
Ambient Temperature, Ta --
°
C
80
100
120
140
160
IT11172
0
16
15
12
14
10
8
6
4
2
20
0
60
40
80
100
140
120
160
hFE -- IC
D
VCE(sat) -- IC
VBE(sat) -- IC
O
C
S
B
S
fT -- IC
G
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
C
C
Case Temperature, Tc --
°
C
C
Nohea ink
相關(guān)PDF資料
PDF描述
2SC3807 NPN Epitaxial Planar Silicon Transistors for High hFE, Low-Frequency General-Purpose Amplifier Applications(用于高直流電流增益,低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管)
2SC3808 NPN Epitaxial Planar Silicon Transistors for High hFE, Low-Frequency General-Purpose Amplifier Applications(用于高直流電流增益,低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管)
2SC3809 NPN Silicon Epitaxial Dual Transistor For Microwave Low Noise Amplifier(應(yīng)用于微波低噪聲放大器的NPN硅外延晶體管)
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