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參數(shù)資料
| 型號： | 2SC3582 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2SC3582 |
DATA SHEET
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10359EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF
Ga
1.2 dB TYP.
12 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
600
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 8 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
8
GHz
V
CE
= 8 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
0.4
0.9
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9
11
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
13
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
K
Marking
K
h
FE
50 to 250
PACKAFE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
0.5
(0.02)
2.54
(0.1)
1.
2.
3.
Base
Emitter
Collector
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
1.27
(0.05)
5
(
4
(
1
(
1
(
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3582K | BJT |
| 2SC3583 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC3583Q | BJT |
| 2SC3583R | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3583R33 | BJT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3583-A | 功能描述:RF TRANSISTOR NPN SOT-23 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:9GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，8V 電流 - 集電極（Ic）（最大值）:65mA 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:SOT-23-3 標準包裝:1 |
| 2SC3583T1B | 制造商:NEC 功能描述:* 制造商:NEC 功能描述:Transistor 3k per reel |
| 2SC3583-T1B | 制造商:NEC 功能描述:Transistor 3k per reel 制造商:NEC Electronics Corporation 功能描述: |
| 2SC3583-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 10V 0.065A 3-Pin SC-59 T/R |
| 2SC3583-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
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