參數(shù)資料
型號(hào)： 2SC3582K
廠商： NEC Corp.
英文描述： BJT
中文描述： 雙極型晶體管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 99K
代理商： 2SC3582K
DATA SHEET
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10359EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF
Ga
1.2 dB TYP.
12 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
600
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 8 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
8
GHz
V
CE
= 8 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
0.4
0.9
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9
11
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
13
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
K
Marking
K
h
FE
50 to 250
PACKAFE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
0.5
(0.02)
2.54
(0.1)
1.
2.
3.
Base
Emitter
Collector
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
1.27
(0.05)
5
(
4
(
1
(
1
(
1
2
3
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